View 2SK3712_4384517.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMD Type
IC MOSFET
MOS Field Effect Transistor 2SK3712
Features
High voltage: VDSS = 250 V Gate voltage rating: 30 V
+0.2 9.70-0.2 +0.15 5.55-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.1 0.80-0.1
Built-in gate protection diode
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
+0.15 0.50-0.15
RDS(on) = 0.58
MAX. (VGS = 10 V, ID = 4.5 A)
0.127 max
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 250 30 9.0 27 1.0 40 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 200V VGS = 10 V ID =9.0A ID=4.5A,VGS(on)=10V,RG=0 ,VDD=125V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=250V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=4.5A VGS=10V,ID=4.5A 2.5 3 3.5 6 0.4 450 100 40 8 8 21 6 14 3 7 0.58 pF pF pF ns ns ns ns nC nC nC Min Typ Max 10 10 4.5 Unit A A V S
3.80
Low on-state resistance
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